{"title":"Heteroepitaxially grown InP solar cells","authors":"I. Weinberg, C. K. Swartz, D. Brinker, D. Wilt","doi":"10.1109/ICIPRM.1990.202988","DOIUrl":null,"url":null,"abstract":"The properties of InP solar cells, processed by OMCVD on silicon substrates with an intermediate GaAs layer (InP/GaAs/Si) and on GaAs substrates (InP/GaAs), were determined before and after irradiation with 10-MeV protons. The preirradiation transport properties were found to be influenced largely by dislocations occurring at the InP-GaAs interface. A carrier removal rate of 1.8*10/sup 3/ cm/sup -1/ was observed after irradiation to a proton fluence of 1.1*10/sup 13/ cm/sup -2/. Despite the high degree of defect generation, the radiation resistance, of the heteroepitaxial cells was considerably greater than that observed for monolithic n/sup +/p InP cells. The observed low cell efficiencies and high radiation resistance are attributed to the dominant effect of dislocations in the cell's p-base region.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202988","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The properties of InP solar cells, processed by OMCVD on silicon substrates with an intermediate GaAs layer (InP/GaAs/Si) and on GaAs substrates (InP/GaAs), were determined before and after irradiation with 10-MeV protons. The preirradiation transport properties were found to be influenced largely by dislocations occurring at the InP-GaAs interface. A carrier removal rate of 1.8*10/sup 3/ cm/sup -1/ was observed after irradiation to a proton fluence of 1.1*10/sup 13/ cm/sup -2/. Despite the high degree of defect generation, the radiation resistance, of the heteroepitaxial cells was considerably greater than that observed for monolithic n/sup +/p InP cells. The observed low cell efficiencies and high radiation resistance are attributed to the dominant effect of dislocations in the cell's p-base region.<>
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