{"title":"Design and fabrication of CMOS-integrated thermoelectric IR microsensors","authors":"K. Lin, Rongshun Chen","doi":"10.1109/OMEMS.2008.4607851","DOIUrl":null,"url":null,"abstract":"This work presents a thermoelectric infrared microsensor which is designed and fabricated with TSMC CMOS-MEMS processes. The proposed device can achieve the responsivity of 432.3 V/W and time constant of 2.49 ms at 1 atm.","PeriodicalId":402931,"journal":{"name":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE/LEOS International Conference on Optical MEMs and Nanophotonics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OMEMS.2008.4607851","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This work presents a thermoelectric infrared microsensor which is designed and fabricated with TSMC CMOS-MEMS processes. The proposed device can achieve the responsivity of 432.3 V/W and time constant of 2.49 ms at 1 atm.
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