Reliability perspective of resistive synaptic devices on the neuromorphic system performance

Pai-Yu Chen, Shimeng Yu
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引用次数: 22

Abstract

Emerging non-volatile memory (eNVM) based synaptic devices are attractive for the replacement of SRAM in the hardware implementation of artificial neural networks (ANNs). However, one of the critical challenges for eNVM is the reliability concerns due to data retention and write endurance failures. This paper investigates the impact of these two failures in the multilayer perceptron (MLP) using our developed NeuroSim+ simulator. For the retention failure in offline classification, we consider various possible conductance drift scenarios and the reported physical model based on conductance variation. The results confirm that faster degradation on the classification accuracy is highly correlated with larger deviation in the weighted sum. For the endurance failure in online learning, the strength of conductance tuning is assumed to become weaker over write pulse cycles. The analysis suggests that the learning accuracy is less impacted because the network is able to adapt itself and activate more synapses to participate in the weight update when the tuning capability of synapses are degraded.
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电阻性突触装置对神经形态系统性能的可靠性研究
新兴的基于非易失性存储器(eNVM)的突触器件在人工神经网络(ann)的硬件实现中取代SRAM具有很大的吸引力。然而,eNVM面临的一个关键挑战是由于数据保留和写入持久性故障引起的可靠性问题。本文使用我们开发的NeuroSim+模拟器研究了这两种故障对多层感知器(MLP)的影响。对于离线分类中的保留失效,我们考虑了各种可能的电导漂移场景和基于电导变化的物理模型。结果表明,分类精度下降越快,加权和偏差越大。对于在线学习中的持久失效,假设电导调谐强度在写入脉冲周期内变弱。分析表明,当突触的调谐能力下降时,网络能够自适应并激活更多的突触参与权值更新,这对学习精度的影响较小。
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