Pockels effect study in strained silicon Mach-Zenhder interferometer

P. Damas, X. Le roux, D. Le Bourdais, E. Cassan, D. Marris-Morini, N. Izard, F. Maillard, T. Maroutian, P. Lecoeur, L. Vivien
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引用次数: 2

Abstract

We report the study of the wavelength dependence in the NIR range (1.3 μm-1.63 μm), of the Pockels effect in strained silicon. The measured second order nonlinear optical susceptibilities varied from Xxxy(2) = 74 ± 25 pm/V to Xxxy(2) = 221 ±34 pm/V, at λ = 1300 nm and λ = 1630 nm respectively.
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应变硅Mach-Zenhder干涉仪中的Pockels效应研究
本文报道了应变硅中Pockels效应在近红外波段(1.3 μm-1.63 μm)的波长依赖关系。在λ = 1300 nm和λ = 1630 nm处,测量到的二阶非线性光学磁化率分别为Xxxy(2) = 74±25 pm/V和Xxxy(2) = 221±34 pm/V。
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