Device properties in 90 nm and beyond and implications on circuit design

C. H. Diaz, K. Fung, S.M. Cheng, K. Cheng, S.W. Wang, H. Huang, Y. Leung, M. Tsai, C.C. Wu, C.C. Lin, Mi-Chang Chang, D. Tang
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引用次数: 5

Abstract

To reconcile scaling-driven fundamental material limitations with industry evolution requirements, flexible CMOS technologies and tighter interaction between process development and circuit/system design are needed to efficiently realize Systems on a Chip (SoC). This paper discusses issues associated with power supply scaling, performance-leakage power optimization, gate dielectric scaling, strain-Si enhancement and I/O support.
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90纳米及以上的器件特性及其对电路设计的影响
为了协调缩放驱动的基本材料限制与行业发展需求,需要灵活的CMOS技术以及工艺开发和电路/系统设计之间更紧密的交互,以有效地实现片上系统(SoC)。本文讨论了与电源缩放、性能泄漏功率优化、栅极介电缩放、应变si增强和I/O支持相关的问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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