L. Minh, M. Hara, H. Kuwano, T. Yokoyama, T. Nishihara, M. Ueda
{"title":"Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film","authors":"L. Minh, M. Hara, H. Kuwano, T. Yokoyama, T. Nishihara, M. Ueda","doi":"10.1109/MEMSYS.2015.7051154","DOIUrl":null,"url":null,"abstract":"We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e<sub>31</sub><sup>2</sup>/(ε<sub>0</sub>ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g<sup>-2</sup>.cm<sup>-3</sup>. This achievement was 1.5-fold increase compared to state of the art.","PeriodicalId":337894,"journal":{"name":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2015.7051154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e312/(ε0ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g-2.cm-3. This achievement was 1.5-fold increase compared to state of the art.
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