A study of electromigration effect according to interposer area effect

Abstract

HBM(High Bandwidth Memory) is stacked structure of 2.5D. As many materials are combined to form a structure, various problems occur. In HBM, which is sensitive to communication speed, delay due to loss becomes a major issue. Therefore DOE(Design of Experiment) was performed by controlling the diameter and depth of TSV in the HBM structure using HFSS EM(Electromagnetic) solver. In the case of return loss, it is judged that the diameter of the TSV has no significant effect compared to the depth. In the case of insertion loss, the insertion loss increases as the diameter of the TSV increases, but on the contrary, the insertion loss tends to decrease as the depth of the TSV increases.