{"title":"Wideband Amplifier with Integrated Power Detector for 100 GHz to 200 GHz mm-Wave Applications","authors":"Paul Stärke, V. Riess, C. Carta, F. Ellinger","doi":"10.1109/BCICTS.2018.8550856","DOIUrl":null,"url":null,"abstract":"This work presents an amplifier for mm-wave applications reaching a peak gain of 26 dB with a usable bandwidth of up to 98 GHz. The design is optimized for an operating frequency between 100 GHz to 200 GHz and can deliver medium output power levels up to 3 dBm. The total dc power consumption is 70mW. To allow the use in ultra wideband communication systems the group delay variation is kept below 5 ps. As additional feature a power detector with a large dynamic range, covering the linear region of the amplifier, is integrated at the output to allow a direct measurement of the outgoing signal levels. The circuit is fabricated in a 130 nm SiGe BiCMOS process with $\\mathbf{f}_{\\max}$ of 500 GHz and covers a core area of only 0.15 mm2.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8550856","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This work presents an amplifier for mm-wave applications reaching a peak gain of 26 dB with a usable bandwidth of up to 98 GHz. The design is optimized for an operating frequency between 100 GHz to 200 GHz and can deliver medium output power levels up to 3 dBm. The total dc power consumption is 70mW. To allow the use in ultra wideband communication systems the group delay variation is kept below 5 ps. As additional feature a power detector with a large dynamic range, covering the linear region of the amplifier, is integrated at the output to allow a direct measurement of the outgoing signal levels. The circuit is fabricated in a 130 nm SiGe BiCMOS process with $\mathbf{f}_{\max}$ of 500 GHz and covers a core area of only 0.15 mm2.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
