A 0.8 /spl mu/m high voltage IC using newly designed 600 V lateral IGBT on thick buried-oxide SOI

Abstract

We have demonstrated that the developed process has a breakdown voltage of higher than 600 V with use of thick buried-oxide and thin SOI. From both experiments and simulations, the cylindrical structure in the LIGBTs shows the best performance; it improves the latch-up tolerance without the increase of on-state voltage. Moreover, the process we have developed is completely compatible with an existing 5 V, 0.8 /spl mu/m CMOS process.