An eyperimental 1Mb cache DRAM with ECC

M. Asakura, Y. Matsuda, H. Hidaka, Y. Tanaka, K. Fujishima, T. Yoshihara
{"title":"An eyperimental 1Mb cache DRAM with ECC","authors":"M. Asakura, Y. Matsuda, H. Hidaka, Y. Tanaka, K. Fujishima, T. Yoshihara","doi":"10.1109/VLSIC.1989.1037481","DOIUrl":null,"url":null,"abstract":"In the recent progress of the micro procesaor unit (MPU), requirements for fast accom a p e d memories have become strong. And a cost-effective cache subsystem is desired for the low-end work station and the personal computer. On the other hand, as for DRAMs, problems of the reliability such as a-particle induced soft e r \" will be more serious according to the increase of density. To overcome these problems, the DRAMs with on-chip ECC (Error Checking and Correcting) circuit were reportcd.l\".12' But using ECC circnit, the access a p e d is delayed to d e t n t and Correct errors. This paper presents the newly proposed CACHE DRAM with the ECC circuit. This ECC circuit improves the reliability of the DRAM data. And on-chip cache =heme can provide a high-speed data mapping and relieve an access time loss for error correction and w reduces the average access time.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1989 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1989.1037481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

In the recent progress of the micro procesaor unit (MPU), requirements for fast accom a p e d memories have become strong. And a cost-effective cache subsystem is desired for the low-end work station and the personal computer. On the other hand, as for DRAMs, problems of the reliability such as a-particle induced soft e r " will be more serious according to the increase of density. To overcome these problems, the DRAMs with on-chip ECC (Error Checking and Correcting) circuit were reportcd.l".12' But using ECC circnit, the access a p e d is delayed to d e t n t and Correct errors. This paper presents the newly proposed CACHE DRAM with the ECC circuit. This ECC circuit improves the reliability of the DRAM data. And on-chip cache =heme can provide a high-speed data mapping and relieve an access time loss for error correction and w reduces the average access time.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
带有ECC的实验性1Mb缓存DRAM
在最近的微处理器(MPU)的发展中,对快速访问和数据存储的要求越来越高。对于低端工作站和个人计算机,需要一种性价比高的缓存子系统。另一方面,对于dram来说,随着密度的增加,a粒子诱导的“软e - r”等可靠性问题将更加严重。为了克服这些问题,我们报道了带有片上ECC (Error Checking and Correcting)电路的dram。但使用ECC电路时,接入信号会被延迟,从而对信号进行检测和纠错。本文提出了一种基于ECC电路的高速缓存DRAM。该ECC电路提高了DRAM数据的可靠性。片上缓存可以提供高速的数据映射,减轻纠错的访问时间损失,减少平均访问时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A circuit design for 2 Gbit/s Si brpolar crosspoint switch LSIs Mappable memory subsystem for high speed applications A 36μa 4MB PSRAM with quadruple array operation High reliability CMOS SRAM with built-in soft defect detection "A 1.6ns 64kb ECL RAM with 1K gate logic"
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1