M. Asakura, Y. Matsuda, H. Hidaka, Y. Tanaka, K. Fujishima, T. Yoshihara
{"title":"An eyperimental 1Mb cache DRAM with ECC","authors":"M. Asakura, Y. Matsuda, H. Hidaka, Y. Tanaka, K. Fujishima, T. Yoshihara","doi":"10.1109/VLSIC.1989.1037481","DOIUrl":null,"url":null,"abstract":"In the recent progress of the micro procesaor unit (MPU), requirements for fast accom a p e d memories have become strong. And a cost-effective cache subsystem is desired for the low-end work station and the personal computer. On the other hand, as for DRAMs, problems of the reliability such as a-particle induced soft e r \" will be more serious according to the increase of density. To overcome these problems, the DRAMs with on-chip ECC (Error Checking and Correcting) circuit were reportcd.l\".12' But using ECC circnit, the access a p e d is delayed to d e t n t and Correct errors. This paper presents the newly proposed CACHE DRAM with the ECC circuit. This ECC circuit improves the reliability of the DRAM data. And on-chip cache =heme can provide a high-speed data mapping and relieve an access time loss for error correction and w reduces the average access time.","PeriodicalId":136228,"journal":{"name":"Symposium 1989 on VLSI Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1989 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1989.1037481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
In the recent progress of the micro procesaor unit (MPU), requirements for fast accom a p e d memories have become strong. And a cost-effective cache subsystem is desired for the low-end work station and the personal computer. On the other hand, as for DRAMs, problems of the reliability such as a-particle induced soft e r " will be more serious according to the increase of density. To overcome these problems, the DRAMs with on-chip ECC (Error Checking and Correcting) circuit were reportcd.l".12' But using ECC circnit, the access a p e d is delayed to d e t n t and Correct errors. This paper presents the newly proposed CACHE DRAM with the ECC circuit. This ECC circuit improves the reliability of the DRAM data. And on-chip cache =heme can provide a high-speed data mapping and relieve an access time loss for error correction and w reduces the average access time.