M. Minami, N. Ohki, H. Ishida, T. Yamanaka, K. Ishibashi, A. Shimizu, T. Kure, T. Nishida, T. Nagano
{"title":"A 6.93-/spl mu/m/sup 2/ n-gate full CMOS SRAM cell technology with high-performance 1.8-V dual-gate CMOS for peripheral circuits","authors":"M. Minami, N. Ohki, H. Ishida, T. Yamanaka, K. Ishibashi, A. Shimizu, T. Kure, T. Nishida, T. Nagano","doi":"10.1109/VLSIT.1995.520836","DOIUrl":null,"url":null,"abstract":"A high-performance microprocessor-compatible small size full CMOS SRAM cell technology has been developed. A 0.3-/spl mu/m gate length load pMOSFET, formed utilizing amorphous-Si-film through-channel implantation, is merged with a 0.25-/spl mu/m gate length pMOSFET for the peripheral circuits. Mask-free contact for TiN local interconnect is developed with wet etching. A 6.93-/spl mu/m/sup 2/ cell area and a high-performance 1.8-V circuit are thus realized.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520836","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A high-performance microprocessor-compatible small size full CMOS SRAM cell technology has been developed. A 0.3-/spl mu/m gate length load pMOSFET, formed utilizing amorphous-Si-film through-channel implantation, is merged with a 0.25-/spl mu/m gate length pMOSFET for the peripheral circuits. Mask-free contact for TiN local interconnect is developed with wet etching. A 6.93-/spl mu/m/sup 2/ cell area and a high-performance 1.8-V circuit are thus realized.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
