Chyan, Chaudhry, Ma, Chen, Carroll, Nagy, Becerro, Lee, Iannuzzi
{"title":"A Very High Performance, Epi-free, And Manufacturable 3.3 V 0.35 /spl mu/m BiCMOS Technology For Wireless Applications","authors":"Chyan, Chaudhry, Ma, Chen, Carroll, Nagy, Becerro, Lee, Iannuzzi","doi":"10.1109/VLSIT.1997.623682","DOIUrl":null,"url":null,"abstract":"In this paper, an epi-free, manufacturable, and high performance 3.3 V 0.35 pm High-Energy Implanted BiCMOS (HEIBiC) technology will be presented. The developed HEIBiC process includes a single-polysilicon NPN bipolar transistor with product of 138 GHzV is shown to be one of the best results for silicon BiCMOS without an epitaxial buried collector.","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623682","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper, an epi-free, manufacturable, and high performance 3.3 V 0.35 pm High-Energy Implanted BiCMOS (HEIBiC) technology will be presented. The developed HEIBiC process includes a single-polysilicon NPN bipolar transistor with product of 138 GHzV is shown to be one of the best results for silicon BiCMOS without an epitaxial buried collector.
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