Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width

Abstract

The use of high mobility channel materials such as Germanium can increase the pMOSFET drive current, thus improving the switching speed of CMOS. In this study the impact of the lateral spacer thickness on the performance of a 20 nm gate-length implant-free quantum well (IFQW) Ge pMOSFET is investigated using comprehensive full-band Monte Carlo simulations. The results of these simulations show that the narrowing of the spacer from 5 nm down to 1 nm leads to a possible ∼ 2.5× increase in drive current.