T. Weatherford, P. Marshall, C. Dale, D. McMorrow, A. Peczalski, S. Baier, M. Carts, M. Twigg
{"title":"Soft error immune LT GaAs ICs","authors":"T. Weatherford, P. Marshall, C. Dale, D. McMorrow, A. Peczalski, S. Baier, M. Carts, M. Twigg","doi":"10.1109/GAAS.1996.567901","DOIUrl":null,"url":null,"abstract":"Implementation of a low temperature grown GaAs (LT GaAs) buffer layer beneath the complementary heterostructure field effect transistor (CHFET) GaAs integrated circuit (IC) process is shown to eliminate soft error susceptibility. With soft errors reduced by over 8 orders of magnitude, the CHFET digital GaAs technology can provide the highest overall radiation immunity for any GaAs or silicon FET-based technology.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567901","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Implementation of a low temperature grown GaAs (LT GaAs) buffer layer beneath the complementary heterostructure field effect transistor (CHFET) GaAs integrated circuit (IC) process is shown to eliminate soft error susceptibility. With soft errors reduced by over 8 orders of magnitude, the CHFET digital GaAs technology can provide the highest overall radiation immunity for any GaAs or silicon FET-based technology.
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