I. Ivanov, C. Hallin, A. Henry, O. Kordina, E. Janzén
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引用次数: 0
Abstract
The relative intensity of the intrinsic and impurity-related luminescence lines reflects the impurity concentration. A calibration procedure is presented for the nitrogen donor impurity in 4H-SiC. The calibration is valid for a large range of n-type doping from 10/sup 14/ cm/sup -3/ to 3.10/sup 16/ cm/sup -3/. Above this level the free-exciton related emission is not observable and below careful attention regarding the compensation of the material should be noted.
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