Aymen Ben Hammadi, Mongia Mhiri, F. Haddad, Sehmi Saad, K. Besbes
{"title":"A 1.82–4.44 GHz reconfigurable bandpass filter based on tunable active inductor","authors":"Aymen Ben Hammadi, Mongia Mhiri, F. Haddad, Sehmi Saad, K. Besbes","doi":"10.1109/IDT.2016.7843050","DOIUrl":null,"url":null,"abstract":"In this paper, a reconfigurable active bandpass filter (BPF) has been designed and fabricated in a 130 nm CMOS technology to cover a wide tuning of radio-frequencies. The filter is based on active inductor comprising tow control voltages for inductance value, quality factor and central frequency tenability. Throughout the wide frequency range (1.82–4.44 GHz), the BPF achieves an average insertion loss of 9.27 ± 0.37 dB and a noise figure between 11.03 and 9.1 dB. Operating at supply voltage of 1 V, the circuit consumes 2.27–2.72 mW and occupies only 390×400 µm2 chip area.","PeriodicalId":131600,"journal":{"name":"2016 11th International Design & Test Symposium (IDT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 11th International Design & Test Symposium (IDT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IDT.2016.7843050","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, a reconfigurable active bandpass filter (BPF) has been designed and fabricated in a 130 nm CMOS technology to cover a wide tuning of radio-frequencies. The filter is based on active inductor comprising tow control voltages for inductance value, quality factor and central frequency tenability. Throughout the wide frequency range (1.82–4.44 GHz), the BPF achieves an average insertion loss of 9.27 ± 0.37 dB and a noise figure between 11.03 and 9.1 dB. Operating at supply voltage of 1 V, the circuit consumes 2.27–2.72 mW and occupies only 390×400 µm2 chip area.