L. Crespi, A. Lacaita, M. Boniardi, E. Varesi, A. Ghetti, A. Redaelli, G. D'Arrigo
{"title":"Modeling of Atomic Migration Phenomena in Phase Change Memory Devices","authors":"L. Crespi, A. Lacaita, M. Boniardi, E. Varesi, A. Ghetti, A. Redaelli, G. D'Arrigo","doi":"10.1109/IMW.2015.7150296","DOIUrl":null,"url":null,"abstract":"Atomic migration on Phase Change Memory devices with wall architecture has been experimentally investigated and a quantitative model including electrical, thermal, and mechanical driving forces has been developed. The experimental results collected by driving the device with programming pulses with direct and reverse polarity have been accounted for. Comparison with data of atomic migration on heavily cycled cells is also provided.","PeriodicalId":107437,"journal":{"name":"2015 IEEE International Memory Workshop (IMW)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2015.7150296","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Atomic migration on Phase Change Memory devices with wall architecture has been experimentally investigated and a quantitative model including electrical, thermal, and mechanical driving forces has been developed. The experimental results collected by driving the device with programming pulses with direct and reverse polarity have been accounted for. Comparison with data of atomic migration on heavily cycled cells is also provided.
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