H. Struyf, D. Hendrickx, J. Van Olmen, F. Iacopi, O. Richard, Y. Travaly, M. Van Hove, W. Boullart, S. Vanhaelemeersch
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引用次数: 6
Abstract
Etch and strip plasma-induced damage is well-known to make the integration of sensitive low-k dielectrics in damascene schemes cumbersome. In this paper, three metal hardmask-based single-damascene patterning approaches are compared. EFTEM analysis and integrated k-value extraction show that the use of a metal hardmask-based scheme with optimized plasma chemistries and etch/strip sequencing results in very low damage to the SiOC(H) low-k dielectric.
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