GaN devices for automotive application and their challenges in adoption

T. Kachi
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引用次数: 2

Abstract

Currently, electrification of automobiles is an urgent task, and high-performance power devices are indispensable items for their electrification. Wide bandgap semiconductors are powerful candidates for power devices used in electric vehicles (EV) and fuel cell vehicles (FCV) in the near future, and recent advances in GaN power devices are prominent in particular. Lateral GaN power devices on Si substrates beGaN to be commercialized, and they are moving to system development. Research and development of vertical GaN power devices are also accelerating. Such high-performance devices are expected to greatly contribute to the electrification of automobiles, and interest in GaN power devices is increasing.
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汽车用GaN器件及其应用中的挑战
当前,汽车电气化是一项紧迫的任务,高性能动力器件是汽车电气化不可缺少的物品。在不久的将来,宽带隙半导体是用于电动汽车(EV)和燃料电池汽车(FCV)的功率器件的有力候选者,GaN功率器件的最新进展尤其突出。硅衬底上的横向GaN功率器件开始商业化,并向系统开发方向发展。垂直GaN功率器件的研究和开发也在加速。这种高性能器件有望为汽车电气化做出巨大贡献,对GaN功率器件的兴趣正在增加。
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