K. Kohiro, K. Kainosho, H. Shimakura, T. Fukui, O. Oda
{"title":"Growth of large diameter InP single crystals by the phosphorus vapor controlled LEC method","authors":"K. Kohiro, K. Kainosho, H. Shimakura, T. Fukui, O. Oda","doi":"10.1109/ICIPRM.1990.202983","DOIUrl":null,"url":null,"abstract":"Large-diameter InP Single crystals (60 mm and 3 in) have been grown by a phosphorus-vapor-controlled liquid-encapsulated-Czochralski (PC-LEC) method in which the pulling rod is not sealed by an encapsulant but by a mechanical seal. The advantage of this technology is that the crystal growth can be performed in an industrial setting because of the ease of instrumentation. Both S-doped and Fe-doped single crystals have been grown. In the case of S-doped crystals, the dislocation free area was greatly increased compared with the conventional LEC method. A 3-in Fe-doped InP crystal with a dislocation density lower than 5*10/sup 4/ cm/sup -2/ was also grown.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Large-diameter InP Single crystals (60 mm and 3 in) have been grown by a phosphorus-vapor-controlled liquid-encapsulated-Czochralski (PC-LEC) method in which the pulling rod is not sealed by an encapsulant but by a mechanical seal. The advantage of this technology is that the crystal growth can be performed in an industrial setting because of the ease of instrumentation. Both S-doped and Fe-doped single crystals have been grown. In the case of S-doped crystals, the dislocation free area was greatly increased compared with the conventional LEC method. A 3-in Fe-doped InP crystal with a dislocation density lower than 5*10/sup 4/ cm/sup -2/ was also grown.<>
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