Akifumi Iijima, K. Kawahara, Katsutoshi Sugawara, S. Hino, Katsuhiro Fujiyoshi, Y. Oritsuki, Takeshi Murakami, Tetsuo Takahashi, Y. Kagawa, Yoichi Hironaka, K. Nishikawa
{"title":"Improving Surge Current Capability of SBD-Embedded SiC-MOSFETs in Parallel Connection by Applying Bipolar Mode Activation Cells","authors":"Akifumi Iijima, K. Kawahara, Katsutoshi Sugawara, S. Hino, Katsuhiro Fujiyoshi, Y. Oritsuki, Takeshi Murakami, Tetsuo Takahashi, Y. Kagawa, Yoichi Hironaka, K. Nishikawa","doi":"10.1109/ISPSD57135.2023.10147424","DOIUrl":null,"url":null,"abstract":"A novel structure named bipolar mode activation cell (BMA cell) is demonstrated to prevent current crowding in parallel connections of SBD-embedded SiC-MOSFETs during a surge current event. In a BMA cell, where the SBD area is partly filled with p-body to inactivate the corresponding part of SBD, I-V characteristics are uniform for each parallel-connected device under a surge condition. The parallel-connected devices with BMA cell have more than 5 times higher surge current capability compared with the conventional devices owing to the absence of current crowding.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD57135.2023.10147424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A novel structure named bipolar mode activation cell (BMA cell) is demonstrated to prevent current crowding in parallel connections of SBD-embedded SiC-MOSFETs during a surge current event. In a BMA cell, where the SBD area is partly filled with p-body to inactivate the corresponding part of SBD, I-V characteristics are uniform for each parallel-connected device under a surge condition. The parallel-connected devices with BMA cell have more than 5 times higher surge current capability compared with the conventional devices owing to the absence of current crowding.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
