{"title":"Noise spectroscopy of semiconductor materials and devices","authors":"J. Sikula, L. Štourač","doi":"10.1109/MIEL.2002.1003370","DOIUrl":null,"url":null,"abstract":"The noise spectroscopy in time and frequency domain is used to give information on single carrier trapping and charge carrier transport in MOSFETs, quantum dots, conducting film resistors, capacitors and single crystals. Defects in the vicinity of the p-n junction and MOS channel create 1/f noise, burst noise or RTS noise. The sources of fluctuation are quantum transitions of carriers between localised states and energy bands, carrier number and mobility. Noise reliability indicators are used to assess the device quality and reliability.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003370","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The noise spectroscopy in time and frequency domain is used to give information on single carrier trapping and charge carrier transport in MOSFETs, quantum dots, conducting film resistors, capacitors and single crystals. Defects in the vicinity of the p-n junction and MOS channel create 1/f noise, burst noise or RTS noise. The sources of fluctuation are quantum transitions of carriers between localised states and energy bands, carrier number and mobility. Noise reliability indicators are used to assess the device quality and reliability.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
