{"title":"The preparation of Fe-doped and nominally undoped semi-insulating InP","authors":"G. Muller, D. Hofmann, P. Kipfer, F. Mosel","doi":"10.1109/ICIPRM.1990.202980","DOIUrl":null,"url":null,"abstract":"Nominally undoped semi-insulating (SI) InP (p approximately=10/sup 7/ Omega cm) was prepared by annealing of InP wafers in a phosphorus atmosphere. The electronic transport properties are compared to those of Fe-doped (SI) InP crystals grown by the liquid-encapsulated-Czochralski (LEC) technique. The values of the electron mobility of the undoped SI material are considerably higher than those of the Fe-doped and are close to the theoretical values of undoped InP. Depth profiles of the carrier concentration show a strong variation within the first 20 mu m, which can be fitted by the literature data of the diffusion coefficients of P and In, but the bulk SI behavior of the samples cannot be explained by self-diffusion mechanisms. The position of the energy level of the deep acceptor is found to lie 0.67+or-0.02 eV below the edge of the conduction band. Although this value is close to that of Fe/sup 3+/2+/ the results of chemical analysis make it unlikely that Fe is the acceptor.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202980","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Nominally undoped semi-insulating (SI) InP (p approximately=10/sup 7/ Omega cm) was prepared by annealing of InP wafers in a phosphorus atmosphere. The electronic transport properties are compared to those of Fe-doped (SI) InP crystals grown by the liquid-encapsulated-Czochralski (LEC) technique. The values of the electron mobility of the undoped SI material are considerably higher than those of the Fe-doped and are close to the theoretical values of undoped InP. Depth profiles of the carrier concentration show a strong variation within the first 20 mu m, which can be fitted by the literature data of the diffusion coefficients of P and In, but the bulk SI behavior of the samples cannot be explained by self-diffusion mechanisms. The position of the energy level of the deep acceptor is found to lie 0.67+or-0.02 eV below the edge of the conduction band. Although this value is close to that of Fe/sup 3+/2+/ the results of chemical analysis make it unlikely that Fe is the acceptor.<>
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