Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition

R. M. Biefeld, A. Allerman, S. Kurtz, K. Baucom
{"title":"Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition","authors":"R. M. Biefeld, A. Allerman, S. Kurtz, K. Baucom","doi":"10.1109/COMMAD.1998.791582","DOIUrl":null,"url":null,"abstract":"We report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb multistage emitters using a high speed rotating disk reactor. The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multistage, type I, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multistage devices. Broadband LED's produced 2 mW average power at 3.7 /spl mu/m and 80 K and 0.1 mW at 4.3 /spl mu/m and 300 K. A multistage, 3.8-3.9 /spl mu/m laser structure operated up to T=180 K. At 80 K, peak-power >110 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791582","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

We report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb multistage emitters using a high speed rotating disk reactor. The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multistage, type I, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multistage devices. Broadband LED's produced 2 mW average power at 3.7 /spl mu/m and 80 K and 0.1 mW at 4.3 /spl mu/m and 300 K. A multistage, 3.8-3.9 /spl mu/m laser structure operated up to T=180 K. At 80 K, peak-power >110 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers.
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基于金属有机化学气相沉积法生长的InAsSb应变层的多级红外发射体
本文报道了利用高速旋转圆盘反应器制备中红外InAsSb多级发射体的金属-有机化学气相沉积(MOCVD)。该器件包含AlAsSb包层和应变InAsSb有源区。这些发射体具有多级、I型、InAsSb/InAsP量子阱活性区。半金属的GaAsSb/InAs层作为多级注入激光器的内部电子源,AlAsSb层作为电子约束层。这些结构是第一个MOCVD多级装置。宽带LED在3.7 /spl亩/米和80 K时产生2兆瓦的平均功率,在4.3 /spl亩/米和300 K时产生0.1兆瓦的平均功率。采用多级、3.8 ~ 3.9 μ m /spl μ m激光结构,工作温度可达180 K。在80 K时,这些增益制导激光器的峰值功率为110 mW/facet,斜率效率高达48%。
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