Y. Kasashima, Shinji Kuniie, Toshiyuki Sayama, T. Tabaru
{"title":"Practical Load Impedance Monitoring System Externally Installed in Plasma Etching Equipment","authors":"Y. Kasashima, Shinji Kuniie, Toshiyuki Sayama, T. Tabaru","doi":"10.1109/ISSM55802.2022.10027105","DOIUrl":null,"url":null,"abstract":"We have developed the load impedance monitoring method for plasma etching process, which can be externally installed in mass-production equipment. The monitoring system can detect micro-arc discharge and monitor the condition of the film deposited on inner wall of process chamber. In this study, we have upgraded the monitoring system to enhance precision, practicality, and versatility. The system can be used as an effective method for real-time and noninvasive monitoring of plasma etching process.","PeriodicalId":130513,"journal":{"name":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM55802.2022.10027105","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have developed the load impedance monitoring method for plasma etching process, which can be externally installed in mass-production equipment. The monitoring system can detect micro-arc discharge and monitor the condition of the film deposited on inner wall of process chamber. In this study, we have upgraded the monitoring system to enhance precision, practicality, and versatility. The system can be used as an effective method for real-time and noninvasive monitoring of plasma etching process.
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