J. Tranchant, E. Janod, B. Corraze, M. Besland, L. Cario
{"title":"From Resistive Switching Mechanisms in AM4Q8 Mott Insulators to Mott Memories","authors":"J. Tranchant, E. Janod, B. Corraze, M. Besland, L. Cario","doi":"10.1109/IMW.2015.7150287","DOIUrl":null,"url":null,"abstract":"The application of electrical pulses on Mott insulators AM4Q8 (A = Ga, Ge ; M = V, Nb, Ta, Mo; Q = S, Se) induces a new phenomenon of resistive switching (RS). Appearing above threshold electric fields of a few kV/cm, this volatile transition stabilizes into a non volatile RS for higher electric fields. A pulse protocol alternating short multi-pulses of high voltage with long single pulses of low voltage enables to control this reversible RS in crystals and thin films. The resulting cycling performances obtained on GaV4S8 miniaturized devices demonstrate the interest of these compounds towards Mott memory applications.","PeriodicalId":107437,"journal":{"name":"2015 IEEE International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2015.7150287","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The application of electrical pulses on Mott insulators AM4Q8 (A = Ga, Ge ; M = V, Nb, Ta, Mo; Q = S, Se) induces a new phenomenon of resistive switching (RS). Appearing above threshold electric fields of a few kV/cm, this volatile transition stabilizes into a non volatile RS for higher electric fields. A pulse protocol alternating short multi-pulses of high voltage with long single pulses of low voltage enables to control this reversible RS in crystals and thin films. The resulting cycling performances obtained on GaV4S8 miniaturized devices demonstrate the interest of these compounds towards Mott memory applications.
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