{"title":"A study of interaction between electrostatic discharge and hot carrier effect and its effect on protection circuit reliability","authors":"I. Manna, P. Tan, Y. Tan, K. Lo","doi":"10.1109/IPFA.2002.1025616","DOIUrl":null,"url":null,"abstract":"Studied the effect of non-destructive ESD events on hot carrier degradation parameters in an advanced deep submicron technology. Also investigated are two ESD protection strategies (substrate-biased NMOS and source injection technique) and they are shown to have unequal performance from the standpoint of hot-carrier reliability after ESD pre-stress.","PeriodicalId":328714,"journal":{"name":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2002.1025616","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Studied the effect of non-destructive ESD events on hot carrier degradation parameters in an advanced deep submicron technology. Also investigated are two ESD protection strategies (substrate-biased NMOS and source injection technique) and they are shown to have unequal performance from the standpoint of hot-carrier reliability after ESD pre-stress.
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