K. Tsutsui, K. Majima, Y. Fukagawa, Y. Sasaki, K. Okashita, H. Tamura, K. Kakushima, H. Ito, B. Mizuno, H. Iwai
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引用次数: 3
Abstract
In this work, the shallow B doped layers formed by plasma doping and activation process using spike-RTA or flash lamp annealing (FLA) were characterized by Hall measurement, and carrier mobility and activation rate in these layers are evaluated in conjunction with doping method and activation process.
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