O. Thomas, B. Zimmer, B. Pelloux-Prayer, N. Planes, K. Akyel, L. Ciampolini, P. Flatresse, B. Nikolić
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引用次数: 21
Abstract
Unique features of the 28nm ultra-thin body and buried oxide (UTBB) FDSOI technology enable the operation of SRAM in a wide voltage range. Minimum operating voltage limitations of a high-density (HD) 6-transistor (6T) SRAM can be overcome by using a single p-well (SPW) bitcell design in FDSOI. Transient simulations of dynamic failure metrics suggest that a HD 6T SPW array with 128 cells per bitline operates down to 0.65V in typical conditions with no assist techniques. In addition, a wide back-bias voltage range enables run-time tradeoffs between the low leakage current in the sleep mode and the short access time in the active mode, making it attractive for high-performance portable applications.
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