A Decade Bandwidth 90 W GaN HEMT Push-Pull Power Amplifier for VHF / UHF Applications

K. Krishnamurthy, J. Martin, D. Aichele, D. Runton
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引用次数: 6

Abstract

A decade bandwidth 90 W, GaN HEMT push-pull power amplifier has been demonstrated. The power amplifier exhibits 18 dB small-signal gain with 20-1100 MHz 3-dB bandwidth and obtains 82.2-107.5 W CW output power with 51.9-73.8 % drain efficiency and 15.2-16.3 dB power gain over the 100-1000 MHz band. The push-pull power amplifier occupies a 2 x 2 inch PCB area and uses a novel compact broadband low loss coaxial coiled 1:1 balun to combine two 45 W packaged broadband lossy matched GaN HEMT amplifiers matched to 25 U. The packaged amplifiers contain a GaN on SiC HEMT operating at 50 V drain voltage with integrated passive matching circuitry on GaAs substrate. These amplifiers are targeted for use in multi-band multi-standard communication systems and for instrumentation applications.
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一种用于VHF / UHF应用的十频宽90w GaN HEMT推挽功率放大器
一个十频宽90 W的GaN HEMT推挽功率放大器已被证明。该功率放大器具有18 dB的小信号增益和20-1100 MHz的3db带宽,在100-1000 MHz频段内可获得82.2-107.5 W的连续输出功率,漏极效率为51.9% - 73.8%,功率增益为15.2-16.3 dB。推挽功率放大器占用2 x 2英寸的PCB面积,并使用新型紧凑型宽带低损耗同轴线圈1:1平衡将两个匹配25 u的45 W封装宽带有损匹配GaN HEMT放大器组合在一起。封装放大器包含工作在50 V漏极电压下的GaN on SiC HEMT,并在GaAs衬底上集成无源匹配电路。这些放大器的目标是用于多频段多标准通信系统和仪器仪表应用。
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