Improvement in the uniformity and the thermal stability of Hf-silicate gate dielectric by plasma-nitridation

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765) Pub Date : 2003-12-19 DOI:10.1109/IWGI.2003.159180

S. Kamiyama, T. Aoyama, Y. Tsutsumi, H. Takada, A. Horiuchi, T. Maeda, K. Torii, H. Kitajima, T. Arikado

引用次数: 6

Abstract

In this study, we used HfSiO/sub x/ with Hf concentration of 60% in order to obtain a EOT less than 1.5nm, and the influence of nitrogen concentration on the electrical properties was examined.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

等离子体氮化改善硅酸铪栅极介质均匀性和热稳定性

在本研究中，我们使用HfSiO/sub x/， Hf浓度为60%，获得了小于1.5nm的EOT，并考察了氮浓度对电性能的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)

自引率

0.00%

发文量

期刊最新文献

Improved performance of FETs with HfAlOx gate dielectrics using optimized poly-SiGe gate electrodes Dependence of electron mobility by remote coulomb scattering on dielectric constant distribution in stacked gate dielectrics Atomic layer deposition chemistry, mechanisms and related physical properties of high permittivity dielectric oxides Solution-based fabrication of high-k gate dielectrics Method of increasing gate nitridation and its impact on CMOS devices