Enhanced blue emission from Tm-doped Al/sub x/Ga/sub 1-x/N electroluminescent thin films

D. S. Lee, A. Steckl, U. Hommerich, E. Nyein, P. Rack, James M. Fitz-Gerald, J. Zavada
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引用次数: 3

Abstract

In this paper, we report on the growth of in-situ Tm-doped Al/sub x/Ga/sub 1-x/N films and the corresponding effect of Al composition on the EL emission. PL and CL show almost same trend as EL with various Al compositions. The 465-nm emission is barely present at x=0.16, it becomes very clear for x/spl ges/0.39, and it dominates for x/spl ges/0.81. The EL emission at 802 nm experienced the opposite trend, decreasing with Al composition. We have confirmed that blue EL emission becomes dominant over IR emission with increasing Al composition in the Al/sub x/Ga/sub 1-x/N host.
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tm掺杂Al/sub -x/ Ga/sub - 1-x/N电致发光薄膜蓝光发射增强
本文报道了原位tm掺杂Al/sub x/Ga/sub 1-x/N薄膜的生长以及Al成分对EL发射的相应影响。不同Al组分的PL和CL表现出与EL几乎相同的趋势。在x=0.16时,465 nm的发射几乎不存在,在x/spl ges/0.39时变得非常明显,在x/spl ges/0.81时占主导地位。802 nm处的EL发射则呈现相反的趋势,随Al成分的增加而降低。我们已经证实,随着Al/sub x/Ga/sub 1-x/N中Al成分的增加,蓝色EL发射比IR发射更占优势。
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