Comparative study of usefulness of FeFET, FTJ and ReRAM technology for ternary arithmetic

Abstract

From a computer architecture and arithmetic perspective, one of the most attractive features of non-volatile memory technologies and memristive devices is their ability to store multiple bits in a single physical memory cell. Moreover, this offers the possibility not only to store data, but also to become an inherent part of a computational process in terms of an in-memory computing concept. The paper presents results of a concept study in which different memristive and also non-memristive non-volatile devices, namely Resistive RAMs (ReRAMs) and Ferroelectric Field-effect transistors (FeFETs), are comparatively evaluated with respect to their suitability to realise ternary logic operations for building fast and low-power adders using mixed-signal circuits. Such adder structures can provide the arithmetic basis for future embedded low-power AI.