{"title":"Non-destructive extraction of structural parameters of fully-depleted SOI MOSFETs using subthreshold slope characteristics","authors":"H. Ito, K. Asada","doi":"10.1109/COMMAD.1998.791605","DOIUrl":null,"url":null,"abstract":"In this paper we focus on non-destructive extraction method for the structural parameters of FD SOI MOSFETs using S-factor characteristics. We develop a simulator based on a one-dimensional model of the SOI MOSFET for analyzing the back gate characteristics. Parameters extracted by this method are in good agreement with parameters obtained from TEM observation. We evaluate results of this method by analyzing fitting errors and discuss its accuracy.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper we focus on non-destructive extraction method for the structural parameters of FD SOI MOSFETs using S-factor characteristics. We develop a simulator based on a one-dimensional model of the SOI MOSFET for analyzing the back gate characteristics. Parameters extracted by this method are in good agreement with parameters obtained from TEM observation. We evaluate results of this method by analyzing fitting errors and discuss its accuracy.
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