Love H Camnitz, Steve Kofol, Tom Low, Sandeep R Bahl
{"title":"An accurate, large signal, high frequency model for GaAs HBTs","authors":"Love H Camnitz, Steve Kofol, Tom Low, Sandeep R Bahl","doi":"10.1109/GAAS.1996.567895","DOIUrl":null,"url":null,"abstract":"An accurate compact circuit simulation model has been developed for the large-signal, high-frequency behavior of GaAs single heterojunction bipolar transistors (HBTs). A unified, physically-based, quasistatic collector charge function models both base-collector capacitance and collector transit time. It naturally handles collector space-charge effects, \"full-depletion\" of the collector n region, and the dependence of the high-field electron velocity in GaAs on electric field and temperature. An improved charge expression accounts for the Kirk effect. This formulation has produced excellent model fits to measurements of AlGaAs-GaAs HBTs.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"40","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567895","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 40
Abstract
An accurate compact circuit simulation model has been developed for the large-signal, high-frequency behavior of GaAs single heterojunction bipolar transistors (HBTs). A unified, physically-based, quasistatic collector charge function models both base-collector capacitance and collector transit time. It naturally handles collector space-charge effects, "full-depletion" of the collector n region, and the dependence of the high-field electron velocity in GaAs on electric field and temperature. An improved charge expression accounts for the Kirk effect. This formulation has produced excellent model fits to measurements of AlGaAs-GaAs HBTs.