Elizabeth Buitrago, M. Antoniou, Nick Schneider, E. Bianda, Luca De-Michielis, C. Corvasce, F. Udrea
{"title":"Experimental Demonstration of Point-Injection Trench IGBT Concept","authors":"Elizabeth Buitrago, M. Antoniou, Nick Schneider, E. Bianda, Luca De-Michielis, C. Corvasce, F. Udrea","doi":"10.1109/ISPSD57135.2023.10147625","DOIUrl":null,"url":null,"abstract":"The point injection trench IGBT is a promising concept based on the narrowing of the mesa between active gate trenches. In this paper, multiple design variations of the point injection trench IGBT with a voltage rating of 1200 V are fabricated and experimentally investigated. It is shown that sub micron mesa widths are successfully processed and a broad design space of IGBT devices with competitive performance is spanned.","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD57135.2023.10147625","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The point injection trench IGBT is a promising concept based on the narrowing of the mesa between active gate trenches. In this paper, multiple design variations of the point injection trench IGBT with a voltage rating of 1200 V are fabricated and experimentally investigated. It is shown that sub micron mesa widths are successfully processed and a broad design space of IGBT devices with competitive performance is spanned.
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