{"title":"Feature size dependence of total dose effects in the irradiated NMOS devices","authors":"Yujuan He, Yuan Liu, Xiaolan Zhou","doi":"10.1109/EDSSC.2013.6628121","DOIUrl":null,"url":null,"abstract":"Total ionizing dose irradiation effect in NMOS Devices with 0.18μm, 0.35μm and 1μm feature size was studied. Due to the thickness of gate oxide, radiation threshold voltage induced by total dose irradiation became lower as feature size increased. But the leakage current of NMOS devices induced by TID irradiation increased obviously because of trench sidewall leakage.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628121","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Total ionizing dose irradiation effect in NMOS Devices with 0.18μm, 0.35μm and 1μm feature size was studied. Due to the thickness of gate oxide, radiation threshold voltage induced by total dose irradiation became lower as feature size increased. But the leakage current of NMOS devices induced by TID irradiation increased obviously because of trench sidewall leakage.
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