High transmission performance integrated antennas on SOI substrate for VLSI wireless interconnects

A. Triantafyllou, A. Farcy, P. Benech, F. Ndagijimana, J. Torres, O. Exshaw, C. Tinella, O. Richard, C. Raynaud
{"title":"High transmission performance integrated antennas on SOI substrate for VLSI wireless interconnects","authors":"A. Triantafyllou, A. Farcy, P. Benech, F. Ndagijimana, J. Torres, O. Exshaw, C. Tinella, O. Richard, C. Raynaud","doi":"10.1109/IITC.2005.1499931","DOIUrl":null,"url":null,"abstract":"Alternative interconnect systems were recently proposed in order to overcome the problems of time delay, surface, and power consumption related to global traditional ones. The feasibility of wireless intra chip interconnects is studied, by focusing on system transmission properties and parasitic effects between integrated antennas and nearby interconnects. Technological processes were considered in order to deduce innovative design concepts that combine improved transmitted power and reduced interferences between antenna and nearby components on a SOI substrate using CMOS 120 nm technology. As a result, it is shown that moving away locally surrounding metallization greatly improves transmission and that crosstalk effects are of the same order with those of conventional interconnect systems. Wireless interconnect performances and compatibility with standard BEOL are demonstrated.","PeriodicalId":156268,"journal":{"name":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2005.1499931","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Alternative interconnect systems were recently proposed in order to overcome the problems of time delay, surface, and power consumption related to global traditional ones. The feasibility of wireless intra chip interconnects is studied, by focusing on system transmission properties and parasitic effects between integrated antennas and nearby interconnects. Technological processes were considered in order to deduce innovative design concepts that combine improved transmitted power and reduced interferences between antenna and nearby components on a SOI substrate using CMOS 120 nm technology. As a result, it is shown that moving away locally surrounding metallization greatly improves transmission and that crosstalk effects are of the same order with those of conventional interconnect systems. Wireless interconnect performances and compatibility with standard BEOL are demonstrated.
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用于超大规模集成电路无线互连的SOI基板高传输性能集成天线
为了克服与全球传统互连系统相关的时间延迟、表面和功耗问题,最近提出了替代互连系统。研究了无线片内互连的可行性,重点研究了系统传输特性和集成天线与附近互连之间的寄生效应。为了推导出创新的设计概念,考虑了技术过程,结合了使用CMOS 120纳米技术提高发射功率和减少天线与SOI衬底上附近组件之间的干扰。结果表明,移开金属化周围的局部区域大大改善了传输,并且串扰效应与传统互连系统的串扰效应相同。演示了无线互连性能和与标准BEOL的兼容性。
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