Zhiyu Chen, Xuan Li, Xiaochuan Deng, Jun-tao Li, Zhiqiang Li, Y. Zhang, Bo Zhang
{"title":"6.5kV Silicon Carbide Discontinuous Trenched Junction Barrier Schottky Diode","authors":"Zhiyu Chen, Xuan Li, Xiaochuan Deng, Jun-tao Li, Zhiqiang Li, Y. Zhang, Bo Zhang","doi":"10.1109/SSLChinaIFWS49075.2019.9019785","DOIUrl":null,"url":null,"abstract":"In this paper, a new affordable trenched junction barrier Schottky (TJBS) called discontinuous TJBS (DTJBS) diode is proposed and investigated for its better current conduction capability than TJBS. TJBS diode has a poor area of Schottky contact, which is the main cause of the increment of forward voltage (Vf) compared with DTJBS diode. In order to optimize the Vf, physical insights into 6.5kV silicon carbide (SiC) DTJBS diode is carried out by TCAD Silvaco, then shielding effect and current conduction capability are compared with TJBS and analyzed to verify the advantages of DTJBS’s lower Vf. Eventually, The Vf of the device achieves 1.89V while the current is 15A.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a new affordable trenched junction barrier Schottky (TJBS) called discontinuous TJBS (DTJBS) diode is proposed and investigated for its better current conduction capability than TJBS. TJBS diode has a poor area of Schottky contact, which is the main cause of the increment of forward voltage (Vf) compared with DTJBS diode. In order to optimize the Vf, physical insights into 6.5kV silicon carbide (SiC) DTJBS diode is carried out by TCAD Silvaco, then shielding effect and current conduction capability are compared with TJBS and analyzed to verify the advantages of DTJBS’s lower Vf. Eventually, The Vf of the device achieves 1.89V while the current is 15A.
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