Z.B. Zhang, S.C. Song, K. Choi, J. H. Sim, P. Majhi, B. Lee
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引用次数: 6
Abstract
This paper describes a simple process that can tune the work function of ALD TaCN gate electrode on HfO/sub 2/ from 4.47eV to 4.77eV by adding a CVD TiN overlayer. It also discusses the device characteristics of TaCN and TiN/TaCN (TaCN with a TiN overlayer) metal gate/high-k MOSFETs and presents a manufacturable process for integrating dual metal gate/high-k CMOS in a FD-FET technology.
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