A 45nm low power bulk technology featuring carbon co-implantation and laser anneal on 45°-rotated substrate

2008 9th International Conference on Solid-State and Integrated-Circuit Technology Pub Date : 2008-12-30 DOI:10.1109/ICSICT.2008.4734744

J. Yuan, V. Chan, M. Eller, N. Rovedo, H.K. Lee, Y. Gao, V. Sardesai, N. Kanike, V. Vidya, O. Kwon, O. Kwon, J. Yan, S. Fang, W. Wille, H. Wang, Y. Chow, R. Booth, T. Kebede, W. Clark, H. Mo, C. Ryou, J. Liang, J. Yang, C.W. Lai, S.S. Naragad, O. Gluschenkov, M. Visokay, C. Radens, S. Deshpande, H. Shang, Y. Li, N. Cave, J. Sudijono, J. Ku, R. Divakaruni

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引用次数: 4

Abstract

This paper presents a cost-effective low power 45 nm bulk technology platform, primarily designed to serve the wireless multimedia and consumer electronics need. This technology platform features carbon co-IIP in the nMOS halo, laser annealing scheme, stress liner on the 45°-rotated wafer (<100>) for process simplicity to achieve high device performance and low leakage together. Drive current as high as 650/320 uA/um at Ioff of 0.5 nA/um with Vdd=1.1V has been achieved for both NMOS and PMOS respectively. Ring oscillator speed (FO=1) has been boosted up by 30% with the device optimization. SRAM Vt mismatch is also improved by 10% with carbon co-IIP with good SRAM characteristics and low leakage current in 0.299 um2 cell.

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45°旋转基板上碳共植入和激光退火的45nm低功耗体技术

本文提出了一种低成本、低功耗的45纳米体技术平台，主要用于满足无线多媒体和消费电子产品的需求。该技术平台采用nMOS光晕中的碳co-IIP，激光退火方案，45°旋转晶圆上的应力衬垫()，以简化工艺，同时实现高设备性能和低泄漏。NMOS和PMOS分别在0.5 nA/um和Vdd=1.1V时实现了高达650/320 uA/um的驱动电流。环形振荡器的速度(FO=1)随着设备的优化提高了30%。在0.299 um2电池中，采用具有良好SRAM特性和低漏电流的碳co-IIP, SRAM Vt失配也改善了10%。

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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