{"title":"300mm wafer stain formation by Spin Etching","authors":"Keisuke Sato, S. Mashimoto, Masaharu Watanabe","doi":"10.1149/1.2980313","DOIUrl":null,"url":null,"abstract":"Stain film (Porous Silicon Layer) is formed by Spin Etching at room temperature. It is formed on single side of a wafer. It has a potential an insulation layer.","PeriodicalId":184890,"journal":{"name":"2008 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Symposium on Semiconductor Manufacturing (ISSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/1.2980313","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Stain film (Porous Silicon Layer) is formed by Spin Etching at room temperature. It is formed on single side of a wafer. It has a potential an insulation layer.
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