Pub Date : 2008-10-01DOI: 10.1109/ASMC.2009.5155990
Hiroyuki Kobayashi, K. Maeda, M. Izawa
The behavior of particles that are reflected in a turbo molecular pump was investigated by measuring particle trajectories and number of particles that fell on the wafer. Some scattered particles collide with a wafer at a high velocity, which damage fine patterns of the photoresist on a wafer. Particle contamination can be reduced by supplying carrier gas to form down-flow, when etching plasma is not discharged. During plasma discharge, the number of particles that fall on the wafer decreases, because particles are trapped near the plasma-sheath boundary. We found that down-flow particle control reduces particle contamination by 90% through etching including wafer transfer.
{"title":"Reducing contamination of particles reflected in turbo molecular pump","authors":"Hiroyuki Kobayashi, K. Maeda, M. Izawa","doi":"10.1109/ASMC.2009.5155990","DOIUrl":"https://doi.org/10.1109/ASMC.2009.5155990","url":null,"abstract":"The behavior of particles that are reflected in a turbo molecular pump was investigated by measuring particle trajectories and number of particles that fell on the wafer. Some scattered particles collide with a wafer at a high velocity, which damage fine patterns of the photoresist on a wafer. Particle contamination can be reduced by supplying carrier gas to form down-flow, when etching plasma is not discharged. During plasma discharge, the number of particles that fall on the wafer decreases, because particles are trapped near the plasma-sheath boundary. We found that down-flow particle control reduces particle contamination by 90% through etching including wafer transfer.","PeriodicalId":184890,"journal":{"name":"2008 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125002177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ray Yen, Daniel Chen, Mingjen Cheng, Andy Lan, Damian Chen, R. Ghaskadvi, E. Chang
Identifying hotspots - structures that limit the lithography process window - become increasingly important as the industry relies heavily on RET to print subwavelength designs. KLA-Tencor's patented Process Window Qualification (PWQ) methodology has been used for this purpose in various fabs. PWQ methodology has three key advantages (a) PWQ Layout - to obtain the best sensitivity (b) Design Based Binning - for pattern repeater analysis (c) Intelligent sampling - for the best DOI sampling rate. This paper evaluates two different analysis stratagies for SEM review sampling successfully deployed at Inotera Memories, Inc. We propose a new approach combining the location repeater and pattern repeaters. Based on a recent case study the new sampling flow reduces the data analysis and sampling time from 6 hours to 1.5 hour maintaining maximum DOI sample rate.
{"title":"Lithography hotspot discovery at 70nm DRAM 300mm fab: Process Window Qualification using Design Base Binning","authors":"Ray Yen, Daniel Chen, Mingjen Cheng, Andy Lan, Damian Chen, R. Ghaskadvi, E. Chang","doi":"10.1117/12.804563","DOIUrl":"https://doi.org/10.1117/12.804563","url":null,"abstract":"Identifying hotspots - structures that limit the lithography process window - become increasingly important as the industry relies heavily on RET to print subwavelength designs. KLA-Tencor's patented Process Window Qualification (PWQ) methodology has been used for this purpose in various fabs. PWQ methodology has three key advantages (a) PWQ Layout - to obtain the best sensitivity (b) Design Based Binning - for pattern repeater analysis (c) Intelligent sampling - for the best DOI sampling rate. This paper evaluates two different analysis stratagies for SEM review sampling successfully deployed at Inotera Memories, Inc. We propose a new approach combining the location repeater and pattern repeaters. Based on a recent case study the new sampling flow reduces the data analysis and sampling time from 6 hours to 1.5 hour maintaining maximum DOI sample rate.","PeriodicalId":184890,"journal":{"name":"2008 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128034908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-01DOI: 10.1109/ASMC.2009.5155996
P. Stockman, Greg Shuttleworth
On-site generated fluorine meets the sustainability requirements for the future of CVD thin-film process chamber cleaning. Rigorous industry safety standards are maintained, GWP and total carbon footprint impacts are greatly reduced, and significant process improvements are available.
{"title":"Going green with on-site generated fluorine: Sustainable cleaning agent for CVD processes","authors":"P. Stockman, Greg Shuttleworth","doi":"10.1109/ASMC.2009.5155996","DOIUrl":"https://doi.org/10.1109/ASMC.2009.5155996","url":null,"abstract":"On-site generated fluorine meets the sustainability requirements for the future of CVD thin-film process chamber cleaning. Rigorous industry safety standards are maintained, GWP and total carbon footprint impacts are greatly reduced, and significant process improvements are available.","PeriodicalId":184890,"journal":{"name":"2008 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124339716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stain film (Porous Silicon Layer) is formed by Spin Etching at room temperature. It is formed on single side of a wafer. It has a potential an insulation layer.
用自旋蚀刻法在室温下形成染色膜(多孔硅层)。它形成于晶圆片的单面。它在绝缘层上有电势。
{"title":"300mm wafer stain formation by Spin Etching","authors":"Keisuke Sato, S. Mashimoto, Masaharu Watanabe","doi":"10.1149/1.2980313","DOIUrl":"https://doi.org/10.1149/1.2980313","url":null,"abstract":"Stain film (Porous Silicon Layer) is formed by Spin Etching at room temperature. It is formed on single side of a wafer. It has a potential an insulation layer.","PeriodicalId":184890,"journal":{"name":"2008 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130655816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-09-01DOI: 10.1109/ISSM.2006.4492992
Michihiro Inoue
On behalf of the International Symposium on Semiconductor Manufacturing (ISSM) 2008 Executive Committee, it is a great pleasure and honor for us to have you at the seventeenth annual ISSM.
{"title":"Message from ISSM 2008 Executive Committee chair","authors":"Michihiro Inoue","doi":"10.1109/ISSM.2006.4492992","DOIUrl":"https://doi.org/10.1109/ISSM.2006.4492992","url":null,"abstract":"On behalf of the International Symposium on Semiconductor Manufacturing (ISSM) 2008 Executive Committee, it is a great pleasure and honor for us to have you at the seventeenth annual ISSM.","PeriodicalId":184890,"journal":{"name":"2008 International Symposium on Semiconductor Manufacturing (ISSM)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132886010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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