Atomic Layer Deposition (ALD) Tungsten NEMS Devices via a Novel Top-Down Approach

Abstract

In this paper we present a novel low temperature, CMOS compatible, direct top-down nano-fabrication process employing ALD tungsten (WALD) as a structural material for nano-electro-mechanical systems (NEMS). Using this process doubly clamped suspended NEMS devices have been successfully fabricated and demonstrated. The devices have been observed to operate comparably to 2-terminal electrostatic carbon nanotube (CNT) switches, and MEMS tunneling devices. A lifetime in excess of 660,500 cycles has been observed under low-current-limited operating conditions. Under these conditions the device behavior is stable, reproducible and hysterisis free, resembling that of MEMS tunneling devices.