{"title":"Metal etch with HI-addition to conventional chemistry","authors":"W. Frank","doi":"10.1109/VLSIT.1995.520873","DOIUrl":null,"url":null,"abstract":"The photoresist selectivity is known to increase by changing from chlorine- to bromine-based etchants. Therefore, skipping to iodine-based etchants should result in further enhancement of photoresist selectivity. This is corroborated by a very high photoresist selectivity of the iodine-based etchant HI. Since HI is also the only iodine containing compound with a sufficient vapor pressure for plasma etching, HI should be the etchant of choice for a new aluminum etch process.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520873","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The photoresist selectivity is known to increase by changing from chlorine- to bromine-based etchants. Therefore, skipping to iodine-based etchants should result in further enhancement of photoresist selectivity. This is corroborated by a very high photoresist selectivity of the iodine-based etchant HI. Since HI is also the only iodine containing compound with a sufficient vapor pressure for plasma etching, HI should be the etchant of choice for a new aluminum etch process.
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