Millimeter-wave Power Amplifier with Linearization Technique in $0.18-\mu \mathrm{m}$ CMOS Process

Abstract

This paper presents a class AB power amplifier (PA) with a pre-distortion linearizer for 28GHz mobile communications in TSMC $0.18-\mu \mathrm{m}$ CMOS technology. To achieve high linear output, a parasitic diode at the common source (CS) input is employed to reduce the variation of the input capacitance and improve the Pout characteristic. The simulation results show that the proposed PA consumes 163.36 mW, and the power gain (S21) of 18 dB is achieved at 28 GHz. The PA achieves saturated power (Psat) of 17.62 dBm and maximum PAE of about %21 with an output 1-dB compression point (OP1dB) of 16.21 dBm. By pre-distortion linearization, the output power at the 1dB compression point increases by 3.55dB, with an efficient gain compensation performance.