LPP-EUV light source for HVM lithography

T. Saito, Y. Ueno, T. Yabu, A. Kurosawa, S. Nagai, T. Yanagida, T. Hori, Y. Kawasuji, T. Abe, T. Kodama, H. Nakarai, T. Yamazaki, H. Mizoguchi
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引用次数: 1

Abstract

We have been developing a laser produced plasma extremely ultra violet (LPP-EUV) light source for a high volume manufacturing (HVM) semiconductor lithography. It has several unique technologies such as the high power short pulse carbon dioxide (CO2) laser, the short wavelength solid-state pre-pulse laser and the debris mitigation technology with the magnetic field. This paper presents the key technologies for a high power LPP-EUV light source. We also show the latest performance data which is 188W EUV power at intermediate focus (IF) point with 3.7% conversion efficiency (CE) at 100 kHz.
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用于HVM光刻的LPP-EUV光源
我们一直在开发一种用于大批量制造(HVM)半导体光刻的激光产生等离子体极紫外光(LPP-EUV)光源。它具有高功率短脉冲二氧化碳(CO2)激光器、短波固体预脉冲激光器和磁场碎片缓减技术等独特技术。本文介绍了高功率超低极紫外光源的关键技术。我们还展示了中间焦点(IF)点188W的EUV功率和100 kHz时3.7%的转换效率的最新性能数据。
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