H. Arimura, E. Capogreco, A. Vohra, C. Porret, R. Loo, E. Rosseel, A. Hikavyy, D. Cott, G. Boccardi, L. Witters, G. Eneman, J. Mitard, N. Collaert, N. Horiguchi
{"title":"Toward high-performance and reliable Ge channel devices for 2 nm node and beyond","authors":"H. Arimura, E. Capogreco, A. Vohra, C. Porret, R. Loo, E. Rosseel, A. Hikavyy, D. Cott, G. Boccardi, L. Witters, G. Eneman, J. Mitard, N. Collaert, N. Horiguchi","doi":"10.1109/IEDM13553.2020.9372007","DOIUrl":null,"url":null,"abstract":"This paper describes our recent research progress on high-mobility Ge-channel n/pFETs. Gate stack, junction and contact are the key challenging components of Ge n/pFETs. Through the improvement of those unit modules, the electrical performance and reliability of Ge FinFET and gate-all-around (GAA) nanowire (NW) pFETs have been improved. Remaining technical challenges for the realization of high performance and reliable Ge n/pFETs will be discussed.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9372007","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper describes our recent research progress on high-mobility Ge-channel n/pFETs. Gate stack, junction and contact are the key challenging components of Ge n/pFETs. Through the improvement of those unit modules, the electrical performance and reliability of Ge FinFET and gate-all-around (GAA) nanowire (NW) pFETs have been improved. Remaining technical challenges for the realization of high performance and reliable Ge n/pFETs will be discussed.
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