{"title":"Oriented SnS thin films formed by nano-multilayer method","authors":"Zhan Xu, Yigang Chen, Wei-min Shi, Linjun Wang","doi":"10.1117/12.888219","DOIUrl":null,"url":null,"abstract":"Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed by thermal annealing at 400 degrees for 3 hours in Argon atmosphere. The films showed strong (040) crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energy band gap Eg=1.44 ev and a P-type conductivity with a resistivity of 5 Ω•cm.","PeriodicalId":316559,"journal":{"name":"International Conference on Thin Film Physics and Applications","volume":"7995 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.888219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed by thermal annealing at 400 degrees for 3 hours in Argon atmosphere. The films showed strong (040) crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energy band gap Eg=1.44 ev and a P-type conductivity with a resistivity of 5 Ω•cm.
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