The study of optical properties of Zn/sub 1-x/MN/sub x/Se thin films grown by MOCVD on GaAs substrates

S. Lu, C. Yang, J. Dai, J.S. Hsuang, W. Ge, Y.Q. Wang, J. Zhang, D. Shen, J. Wang
{"title":"The study of optical properties of Zn/sub 1-x/MN/sub x/Se thin films grown by MOCVD on GaAs substrates","authors":"S. Lu, C. Yang, J. Dai, J.S. Hsuang, W. Ge, Y.Q. Wang, J. Zhang, D. Shen, J. Wang","doi":"10.1109/COMMAD.2002.1237311","DOIUrl":null,"url":null,"abstract":"A series of Zn/sub 1-x/Mn/sub x/Se thin film samples with different Mn compositions were grown by metal-organic chemical vapor deposition. X-ray diffraction measurements indicated the good crystallinity of samples. Two emission peaks were observed in photoluminescence (PL) spectra close to the band edge for the samples. The temperature dependence of PL shows the change of the relative intensity of the two emission peaks, which is attributed to the competition between band-to-band excitonic transitions and transitions of localized excitons bound to Mn-induced impurity bound states. Time-resolved PL measurements and PL under different excitation power also support this analysis. Further investigation implies that the impurity bound states are associated with Mn incorporation.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"229 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.2002.1237311","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A series of Zn/sub 1-x/Mn/sub x/Se thin film samples with different Mn compositions were grown by metal-organic chemical vapor deposition. X-ray diffraction measurements indicated the good crystallinity of samples. Two emission peaks were observed in photoluminescence (PL) spectra close to the band edge for the samples. The temperature dependence of PL shows the change of the relative intensity of the two emission peaks, which is attributed to the competition between band-to-band excitonic transitions and transitions of localized excitons bound to Mn-induced impurity bound states. Time-resolved PL measurements and PL under different excitation power also support this analysis. Further investigation implies that the impurity bound states are associated with Mn incorporation.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
GaAs衬底MOCVD生长Zn/sub - 1-x/MN/sub -x/ Se薄膜的光学性质研究
采用金属有机化学气相沉积法制备了不同Mn组分的Zn/sub - 1-x/Mn/sub -x/ Se薄膜样品。x射线衍射测量表明样品结晶度良好。在接近带边的光致发光(PL)光谱中观察到两个发射峰。PL的温度依赖性显示了两个发射峰的相对强度的变化,这是由于带到带激子跃迁和与mn诱导的杂质结合态结合的局域激子跃迁之间的竞争。时间分辨PL测量和不同激励功率下的PL也支持这一分析。进一步的研究表明杂质束缚态与Mn的掺入有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Integrated fabrication of InGaP/GaAs /spl delta/-doped heterojunction bipolar transistor and doped-channel field effect transistor Micro fluxgate sensor using solenoid driving and sensing coils Minimisation of P surface segregation during epitaxial silicon growth for the fabrication of a silicon-based quantum computer Characterisation of Ti:sapphire layers synthesized energy ion implantation Impact of deposition parameters on the characterizations of highly orientated aluminum nitride for film bulk acoustic wave resonator device
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1